The development of new-type memristors with special performance is of great interest. Herein, an inorganicorganic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature-regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermalinduced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30-150 8C, but show nonvolatile memory behavior in the high temperature range of 150-270 8C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 8C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic-organic hybrid POMs are promising materials for making memristors with superior performance.Memristors are leading candidates for the next generation non-volatile memory devices owing to their low power consumption, high access speed, multi-state switching and device scalability. [1][2][3][4][5][6][7] The development of memristors with high performance and reliability under special/harsh environments is in great demand so that they can be applied in many promising fields, such as aerospace, geothermal, oil and gas industries. [8] In the past few decades, great efforts have been paid to improve the switching performance of memristors at high temperatures because the working mechanisms of memory devices, including filamentary conduction, space charge trapping, valence and conformation changes and
The encapsulation of guests into metal−organic frameworks (MOF) is an efficient strategy to generate novel multifunctional materials with enhanced properties. Herein, four halometallate@MOF composites with formulas of {(Pb 2 I 4 Br 3 ) [(Pr(bpdo) [(La(bpdo) 4 (H 2 O) 2 ] 2 } n (4) (bpdo = 4,4′-bipyridine N,N′-dioxide) were prepared. In these composites, lanthanide-viologen MOF act as matrices, whose cavities were penetrated by halometallates. Consequently, the insertion of electron-rich halometallates into electron-deficient lanthanide-viologen matrices leads to the presence of strong room temperature charge transfer (CT) interactions. Importantly, these composites exhibit enhanced photo/thermal stabilities, controllable white emissions, reversible thermochromisms, and good photocurrent response performances. Specially, the memory devices based on these composites illustrate reversible electrical bistability behaviors, which can be assigned to ohmic and space-charge-limited conduction (SCLC) mechanisms. This kind of composite can be utilized as a multifunctional platform with enhanced stability.
The
searching for new nonvolatile memories with the ability of
working in harsh environments such as high temperature or humidity
will be significant for industrial automation. Herein, a thermochromic
polyoxometalate-based metal–organic framework (POMOF) constructed
from Keggin-type polyoxometalates and metalloviologen has been fabricated
as a nonvolatile memory device, which can exhibit stable nonvolatile
memory behavior both at room and high temperature (150 °C) with
stable cycle performance. Furthermore, its extreme working temperature
can be monitored by color change from yellow to black, which stems
from the reversible thermochromism of the POMOF. Importantly, the
crystal structures at room and high temperature (150 °C) have
been determined, which illustrates that the Keggin-type POM (α-GeW12O40)4– anions are anchored in
the metalloviologen cationic [Co2(bpdo)4(H2O)6]n
4n+ cavities through
numerous C–H···OPOM hydrogen bonds.
The high temperature could not destroy its framework but remove its
three lattice water molecules; in addition, more condensed structures
with shorter Ge/W/Co–O lengths, stronger hydrogen bonds, and
more distorted terminal bpdo ligands can be observed. Consequently,
better cycling stability with a more uniform high-resistance state/low-resistance
state can be achieved. Finally, the charge transport mechanism in
this POMOF-based device during the resistive switching process has
been discussed. In all, the combination of electron-poor metalloviologen
with electron reservoir POM can give rise to the enhanced nonvolatile
memory and better thermal stability accompanied with observable chromism.
Good electrical bistability performances in stilbazolium/iodocuprate hybrids stem from the better face-to-face π⋯π stacking interactions induced by the substituents with appropriate lengths and electronic natures.
The design of single-component broadband photoemitters with high stability is imperative for the development of next generation of WLEDs. Here, 1D cationic haloplumbate chains and rigid luminescent naphthalene dicarboxylate (ndc2−)...
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