a b s t r a c t a r t i c l e i n f o Available online xxxxThe surface recombination velocity (S 0 ) in n-type Si (n-Si) wafers has been reduced below 0.1 cm/s by dint of positive fixed charges created by alumina (AlOx) films deposited at a film-temperature of 230°C by catalytic chemical vapor deposition (Cat-CVD) using trimethyl aluminum (TMA) and O 2 . Positive fixed charges of the order of 10 12 charges/cm 2 can be created in AlO x films deposited under O 2 /TMA flow-rate ratios in the range of 3.5-6.5. The extremely small S 0 has been confirmed to be obtainable mainly due to a band bending effect brought about by the positive charges. The polarity and amount of the fixed charges can be determined by the flow-rate ratio of O 2 /TMA.
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