Binding energies of Si 2p core electrons in X-ray photoemission spectra were measured to evaluate Fermi-level of doped films of a-SiC:H with a constant carbon/silicon ratio. Fermi-level of the p-type films deposited under different conditions depended only upon the concentration of boron, determined by secondary ion mass spectroscopy. The comparison between Fermi-level and the activation energy of electrical conductivity showed that the carrier transport in p-type a-SiC:H does not take place at the valence band edge but at the band tail.
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