A new device of high-power AlGaN/GaN heterostructure field-effect transistors (HFETs) fabricated on a Si substrate is proposed. Its application of the power factor correction (PFC) circuit is presented for the first time. The AlGaN/GaN HFETs fabricated on the Si substrate with a gate width of 152 mm exhibited a breakdown voltage of more than 800 V, an onresistance of 65 m, and a maximum drain current of more than 50 A. As for the results of the experiment on the PFC at 200 W and f ¼ 109 kHz, a power conversion efficiency of 95.2% was obtained. This value was about 1% higher than that of the PFC-circuit-using Si devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.