An environmentally friendly solid-state quantum dot sensitized solar cell (ss-QDSSC) was prepared by combining colloidal SnS QDs as the sensitizer and organic hole scavenger spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene) as the solid-state electrolyte, and the energy alignment of SnS and TiO2 was investigated. The bandgap of colloidal SnS QDs increased with decreasing particle size from 14 to 4 nm due to an upshift of the conduction band and a downshift of the valence band. In TiO2/SnS heterojunctions, the conduction band minimum (CBM) difference between TiO2 and SnS was as large as ∼0.8 eV; this difference decreased with decreasing particle size, but was sufficient for electron injection from SnS nanoparticles of any size into TiO2. Meanwhile, the sensitizer regeneration driving force, that is, the difference between the valence band maximum (VBM) of SnS and the work function of the electrolyte, showed an opposite behaviour with the SnS size due to a downward shift of the SnS VB. Consequently, smaller SnS QDs should result in a more efficient charge transfer in heterojunctions, revealing the advantages of QDs vs larger particles as sensitizers. This prediction was confirmed by the improved photovoltaic performance of ss-QDSSCs modified with SnS nanoparticles, which peaked for 5–6 nm sized SnS nanoparticles due to the balance between electron injection and sunlight absorption.

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the physical reason for the decrease in the threshold voltage of indium tin oxide (ITO)/N,N ′-di-[(1-naphthyl)-N,N ′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris(8-hydroxy-quinolinato)aluminum(III) (Alq3)/Al diodes with a pentacene layer sandwiched between ITO and α-NPD layers. The amount of charge accumulated at the α-NPD/Alq3 interface was the same as that at ITO/α-NPD/Alq3/Al diodes under an applied DC voltage corresponding to the threshold voltage, although the charge accumulation proceeded faster. Results showed that the pentacene layer assists hole injection and the succeeding hole accumulation at the α-NPD/Alq3 interface, followed by the electroluminescence (EL) emission. The decrease in threshold voltage by inserting a hole-injection assisted layer such as pentacene is one way of improving the EL device performance.

By using I-V, EL-V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and a-NPD layers in ITO/α-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I-V and EL-V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the a-NPD and Alq3 layers, which resulted in the relaxation of electric field of a-NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I-V and EL-V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.