Monolayer transition-metal dichalcogenides (TMDs) have the potential to become efficient optical-gain materials for low-energy-consumption nanolasers with the smallest gain media because of strong excitonic emission. However, until now TMD-based lasing has been realized only at low temperatures. Here we demonstrate for the first time a room-temperature laser operation in the infrared region from a monolayer of molybdenum ditelluride on a silicon photonic-crystal cavity. The observation is enabled by the unique combination of a TMD monolayer with an emission wavelength transparent to silicon, and a high-Q cavity of the silicon nanobeam. The laser is pumped by a continuous-wave excitation, with a threshold density of 6.6 W cm. Its linewidth is as narrow as 0.202 nm with a corresponding Q of 5,603, the largest value reported for a TMD laser. This demonstration establishes TMDs as practical materials for integrated TMD-silicon nanolasers suitable for silicon-based nanophotonic applications in silicon-transparent wavelengths.
†These authors contributed equally to this work. AbstractStrong Coulomb interaction in 2D materials provides unprecedented opportunities for studying many key issues of condensed matter physics, such as co-existence and mutual conversions of excitonic complexes, fundamental optical processes associated with their conversions, and their roles in the celebrated Mott transition. Recent lasing demonstrations in 2D materials raise important questions about the existence and origin of optical gain and possible roles of excitonic complexes. While lasing occurred at extremely low densities dominated by various excitonic complexes, optical gain was observed in the only experiment at densities several orders of magnitude higher, exceeding the Mott density. Here, we report a new gain mechanism involving charged excitons or trions well below the Mott density in 2D molybdenum ditelluride. Our combined experimental and modeling study not only reveals the complex interplays of excitonic complexes well below the Mott transition, but also provides foundation for lasing at extremely low excitation levels, important for future energy efficient photonic devices.Dynamical processes of quasiparticles such as excitons and their various associated complexes (including charged excitons or trions, bi-excitons, and other highly correlated objects (1)) in solids are at the very core of fundamental condensed matter physics. The evolution of physical states from low to high carrier density involves (2-5) the insulating exciton gas, Bose-Einstein condensate (BEC) (2), co-existence of various excitonic complexes, crossover or transitions to conducting electron-hole plasmas (EHP), or electron-hole liquid (EHL) (3) through the Mott transition (MT) (4). There remain many fundamental issues to be understood associated with the evolution of such quantum quasiparticles and the related phase transitions, especially in the intermediate density regime involving highly correlated complexes. On the other hand, mutual conversions of these excitonic complexes and related phase transitions are also profoundly linked to the natures of different optical processes in semiconductors as carrier density increases (5,6). Light-semiconductor interaction thus plays important dual roles: As an information reporter, the interaction reveals the intrinsic dynamics of evolution, co-existence, and mutual conversion of various excitonic complexes in their passage towards degenerate EHP or EHL through MT, providing deep understandings of physical processes when carrier density is successively increased. At the same time, different conversion processes among various excitonic complexes provide novel absorption or emission mechanisms, forming the physical foundations for photonic functionalities including lasers, solar cells, light emitting diodes, and many other devices. While optical processes are well-understood in the two extremes: pure exciton gas and highly degenerate EHP, the intermediate stages involving various excitonic complexes are much less understood. Recent stud...
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