In order to improve the operation speed of phase change memory (PCM), superlattice-like Ge2Sb2Te5/Sb (SLL GST/Sb) thin films were prepared in a sputtering method to explore the suitability as an active material for PCM application. Compared with GST, SLL GST/Sb thin film has a lower crystallization temperature, crystallization activation energy, thermal conductivity, and smaller crystalline grain size. A faster SET/RESET switching speed (10 ns) and a lower operation power consumption (the energy for RESET operation 9.1 × 10−13 J) are obtained. In addition, GST/Sb shows a good endurance of 8.3 × 104 cycles.
Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization temperature (∼250 °C), larger crystallization activation energy (3.53 eV), and better data retention ability (166 °C for 10 years). N-doping also broadened the band gap and refined grain size. The reversible resistance transition could be achieved by an electric pulse as short as 8 ns for the PCM cell based on N-doped Sb material. A lower operation power consumption (the energy for RESET operation 2.2 × 10−12 J) was obtained. In addition, N-doped Sb material showed a good endurance of 1.8 × 105 cycles.
The Er3+ doped Bi5TiNbWO15 ceramics have been synthesized using conventional solid-state reaction techniques. The crystal structure, ferroelectric properties, UC emission properties and especially the temperature sensing behaviors were systematically studied. With increasing Er3+ content, the investigation of XRD pattern, the ferroelectric loop and the UC emission indicated that the Er3+ ions dopants preferentially substituted the A sites of Bi3TiNbO9 and then Bi2WO6. Based on fluorescence intensity ratio (FIR) technique, the observed results implied the ceramics were promising candidates for temperature sensors in the temperature range of 175 K −550 K. More importantly, this study provided a contrast of temperature sensitivity between emission from the same part (Bi3TiNbO9) in bismuth layered-structure and emission from the different part (Bi3TiNbO9 and Bi2WO6) in bismuth layered-structure for the first time.
We numerically investigate the coupling effects of surface plasmon polaritons (SPPs) and magnetic dipole (MD) resonances in metamaterials, which are composed of an Ag nanodisk array and a SiO2 spacer on an Ag substrate. The periodicity of the Ag nanodisk array leads to the excitation of SPPs at the surface of the Ag substrate. The near-field plasmon interactions between individual Ag nanodisks and the Ag substrate form MD resonances. When the excitation wavelengths of SPPs are tuned to approach the position of MD resonances by changing the array period of Ag nanodisks, SPPs and MD resonances are coupled together into two hybridized modes, whose positions can be well predicted by a coupling model of two oscillators. In the strong coupling regime of SPPs and MD resonances, the hybridized modes exhibit an obvious anti-crossing, resulting into an interesting phenomenon of Rabi splitting. Moreover, the magnetic fields under the Ag nanodisks are greatly enhanced, which may find some potential applications, such as magnetic nonlinearity.
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