A large‐band rectangular‐shaped microstrip‐fed circular slot antenna is studied in this Letter. In this case, many design parameters of this antenna lead to good impedance matching in a wide frequency band. Although the use of a high‐relative‐permittivity (εr = 4.3) substrate usually restricts the operation bandwidth, the measured bandwidth is from 2.277 to 9.272 GHz, which is approximately 124.6 % (VSWR ≤ 2.0). The experimented data for the impedance loci and the radiation patterns of the antenna are also described. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 316–318, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10306
A numerical simulation and an experimental implementation of T‐shaped microstrip‐fed printed slot array antenna are presented in this paper. The proposed antenna with relative permittivity 4.3 and thickness 1.0mm is analyzed by the finite‐difference time‐domain (FDTD) method. The dependence of design parameters on the bandwidth characteristics is investigated. The measured bandwidth of twin‐slot array antenna is from 1.37 GHz to 2.388 GHz, which is approximately 53.9 % for return loss less than or equal to ‐10 dB. The bandwidth of twin‐slot is about 1.06 % larger than that of single‐slot antenna. The measured results are in good agreement with the FDTD results.
In this paper, we study a circular microstripline‐fed single‐layer single‐slot antenna. In this case, a modified circular microstrip feedline leads to good impedance matching in a wide dual band. The 10‐dB return loss impedance bandwidth is 50.8% for cellular (0.824–0.96 GHz) and GSM (0.86–0.88 GHz) operations, and is 37.1% for DCS (1.71–1.88 GHz), PCS (1.85–1.99 GHz), and IMT‐2000 (1.90–2.20 GHz) operations. We obtain the result for the return loss of exhibited multi‐band characteristics. The peak antenna gain is 4.61 dBi and 3.80 dBi for the lower (cellular and GSM) and upper (DCS, PCS, and IMT‐2000) bands, respectively. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 59–62, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10824
An HP8510 network analyzer, in conjunction with the cascade probe station, was used to measure the characteristics of this wideband amplifier. The measured results of transimpedance gain ͉Z 21 ͉/reverse gain ͉S 12 ͉, input/output return loss (͉S 11 ͉ & ͉S 22 ͉), and linearity are shown in Figure 3(a), (b), and (c), respectively. The measured ͉Z 21 ͉ in Figure 3(a) exhibited a flat response with a gain of 51.7 dB⍀, a 3-dB bandwidth of 2.1 GHz, and a reverse gain (͉S 12 ͉) smaller than Ϫ30 dB. Input return loss was smaller than Ϫ10 dB up to 3 GHz while output return loss was smaller than Ϫ10 dB up to 1.5 GHz, as can be seen in Figure 3(b). From Figure 3(c), the input of a 1-dB compression point of Ϫ5 dBm and the input IP 3 of 1 dBm were obtained. These were quite high compared with the typical values of Ϫ20 dBm (input P 1dB ) and Ϫ10 dBm (IIP 3 ) [7]. The results achieved indicate that this multiple feedback amplifier can offer high dynamic range and high linearity in addition to wide bandwidth. CONCLUSIONThe first CMOS wide-band amplifier with the Kukielka configuration was designed and fabricated. The experimental results showed that transimpedance gain of 51.7 dB⍀ and a 3-dB bandwidth of 2.1 GHz were obtained. The input of a 1-dB compression point of Ϫ5 dBm and the input IP 3 of 1 dBm were also achieved. Wide bandwidth, high dynamic range, and high linearity were attributed to the multiple feedback technique used. ACKNOWLEDGEMENTFinancial support from NSC90-2219-E002-009, NSC90-2219-E005-001, and 89-E-FA-06-2-4 are appreciated. A BROADBAND CROSS-SHAPED MICROSTRIPLINE-FED NO-OFFSET RING SLOT ANTENNA
In this letter, we experimentally study a T and a shuntstub-shaped microstrip-fed slot antenna backed by a ground plane. The proposed antenna has a frequency bandwidth of approximately 54% for S F y10 dB, centered around 2.5 GHz, with relati¨ely good pattern 11 characteristics. ᮊ ABSTRACT:A new technique to design wideband low-noise amplifiers ( ) WBLNAs by using parallel FETs is proposed. In particular, this technique permits us to simplify the tradeoff between the gain and noise figure o¨er wide bands. The feasibility of the suggested technique has been¨erified by designing and fabricating a WBLNA with three parallel FETs. ᮊ
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