A joint experimental and theoretical study is presented for the electronic structures of copper respectively. This comparison also points towards surface oxidation and reduction effects that can complicate the interpretation of the photoemission spectra.
Based on in situ and ground‐based observations, a new type of “polar cap hot patch” has been identified that is different from the classical polar cap enhanced density structure (cold patches). Comparing with the classical polar cap patches, which are transported from the dayside sunlit region with dense and cold plasma, the polar cap hot patches are associated with particle precipitations (therefore field‐aligned currents), ion upflows, and flow shears. The hot patches may have the same order of density enhancement as classical patches in the topside ionosphere, suggesting that the hot patches may be produced by transported photoionization plasma into flow channels. Within the flow channels, the hot patches have low‐energy particle precipitation and/or ion upflows associated with field‐aligned currents and flow shears. Corresponding Global Navigation Satellite System (GNSS) signal scintillation measurements indicate that hot patches may produce slightly stronger radio signal scintillation in the polar cap region than classical patches. A new type of polar cap patches, “polar cap hot patches,” is identified to differentiate enhanced density structures from classical patches. Hot patches are associated with particle precipitations, ion upflows, field‐aligned currents, and shear flows in the polar cap. Hot patches may lead to slightly stronger ionospheric scintillations of GNSS signals in the polar cap region than classical patches.
Cu2O thin films have been grown on glass substrates at room temperature by reactive magnetron sputtering. As-deposited films exhibit high electrical resistivity and low optical transmittance. To improve the film properties, post annealing treatments in air at various temperatures have been performed. Low temperature annealing (<300 °C) avoids the film oxidation into CuO and the films remain single-phased. In this temperature range, the annealing in air enhances the transmittance in the visible region due to the decrease of the defect scattering. Moreover, the optical band gap of Cu2O thin films is enlarged from 2.38 to 2.51 eV with increasing annealing temperature. The increase of optical band gap accompanying the reduction of Urbach energy indicates that the widening of optical band gap may result from the partial elimination of defect band tail after thermal annealing in air. Combining experimental results with recent reported calculations, the peak at about 1.7 eV in photoluminescence spectra is assigned to the recombination of first conduction band minimum to copper vacancy.
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