A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square‐wave alternating gate voltages, the spectrally‐narrowed emissions are definitively observed with FWHM ∼2 nm.
We report spectrally-narrowed emissions that take place from an organic semiconductor slab crystal of 2,5-bis(4-biphenylyl)thiophene (BP1T) under a low excitation-intensity regime. These emissions are caused with a mercury lamp that operates on a household power supply with an electric current approximately 1 A. The BP1T slab crystal is equipped with a distributed Bragg reflector. To complete this structure the slab crystal is attached to a diffraction grating that is engraved on a surface of a quartz glass substrate. The diffraction gratings have precisely been formed using a focused ion beam with a nanometer-defined precision. The spectral narrowing accompanied by the emission intensity increment is related to the strong mode-coupling between the forward electromagnetic wave and the backward (i.e., reflected) wave within the grating zone. Using a laser we also carried out the emission measurements on the BP1T crystals under a high excitation-intensity regime. The emissions are characterized as the longitudinal multimode laser oscillation, enabling us to determine the group refractive index of 4.56 for the BP1T slab crystal. Under both the low and high excitation-intensity regimes excitons are dominant species of the emission. Their participation in the spectrally-narrowed emissions is briefly discussed.
We have fabricated semiconducting oligomer films composed of uniaxially-oriented crystal domains by melt molding. It is highly important to generate a temperature gradient in the lateral direction parallel to the substrate on which the said oligomer films are fabricated. As a result, the melted oligomer layer starts to solidify from parts of lower temperatures to end up as a uniaxially aligned film. The uniaxial alignment is further promoted by slowly cooling that oligomer layer. In the present studies, the temperature gradient was set at ∼0.06–0.4 °C/mm. From the polarizing microscope observations, we confirm that within this range the temperature gradient efficiently produces the uniaxial orientation. This method has been applied to fabricating organic field-effect transistors. Those devices show an effective modulation of the drain current with varying gate voltage.
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