ABSTRACT:Recently, there has been an explosive growth in research based on hybrid lead-halide perovskites for photovoltaics owing to rapid improvements in efficiency. The advent of these materials for solar applications has led to widespread interest in understanding the key enabling properties of these materials. This has resulted in renewed interest in related compounds and a search for materials that may replicate the defect-tolerant properties and long lifetimes of the hybrid lead-halide perovskites. Given the rapid pace of development of the field, the rises in efficiencies of these systems have outpaced the more basic understanding of these materials. Measuring or calculating the basic properties, such as crystal/electronic structure and composition, can be challenging because some of these materials have anisotropic structures, and/or are composed of both heavy metal cations and volatile, mobile, light elements. Some consequences are beam damage during characterization, composition change under vacuum, or compound effects, such as the alteration of the electronic structure through the influence of the substrate. These effects make it challenging to understand the basic properties integral to optoelectronic operation. Compounding these difficulties is the rapid pace with which the field progresses. This has created an ongoing need to continually evaluate best practices with respect to characterization and calculations, as well as to identify inconsistencies in reported values to determine if those inconsistencies are rooted in characterization methodology or materials synthesis. This article describes the difficulties in characterizing hybrid lead-halide perovskites and new materials, and how these challenges may be overcome. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 challenges discussed. The focus in this article is on crystallography, composition measurements, photoemission spectroscopy and calculations on perovskites and new, related absorbers. We suggest how some of the important artifacts could be avoided and how the reporting for each technique could be streamlined between groups to ensure reproducibility as the field progresses.

The exploration of emerging materials physics and prospective applications of twodimensional materials greatly relies on the growth control of their thickness, phases, morphologies and film-substrate interactions. Though substantial progresses have been made for the development of two-dimensional films from conventional layered bulky materials, particular challenges remain on obtaining ultrathin, single crystalline, dislocation-free films from intrinsically non-Van der Waals-type three-dimensional materials. In this report, with the successful demonstration of single crystalline ultrathin large scale perovskite halide material, we reveal and identify the favorable role of weak Van der Waals film-substrate interaction on the nucleation and growth of the two-dimensional morphology out of non-layered materials compared to conventional epitaxy. We also show how the bonding nature of the threedimensional material itself affects the kinetic energy landscape of ultrathin films growth. By studying the formation of fractal perovskites assisted with Monte Carlo simulations, we demonstrate that the competition between the Van der Waals diffusion and surface free energy of the perovskite leads to film thickening, suggesting extra strategies such as surface passivation may be needed for the growth of monolayer and a few layers films. Material and Methods Chemical vapor deposition (CVD) synthesis of MAPbCl 3Powdered Lead(II) chloride(PbCl 2 , 99%, Sigma-Aldrich) was placed in the furnace heating center with the heating temperature controlled at 360-380°C, while MACl (99%,Merck KGaA), the second precursor, was placed about 6 cm away from PbCl 2 in the upper stream due to a lower melting point. Fresh cleavaged muscovite mica substrates (SPI Grade V-5) with (001) face exposed were placed in the downstream. Prior to deposition, the base pressure of the system was pumped to 0.3 Torr after which a 30 sccm of Argon was flowed to maintain the pressure at 120-160 Torr before deposition. The chamber temperature rose from room temperature to the deposition temperature rapidly in 5 min. The deposition process lasted for 20 minutes before finally the furnace was shut down. The perovskite(PVK) film was found, in most cases, present on the third substrate with a temperature at about 200°C. Schematic drawing of the experimental setup can be found in Fig S1. Characterization of Perovskite thin filmMorphology of perovskite thin film was characterized by a Nikon Eclipse Ti-S inverted optical microscope and JEOL JSM 6330F Field Emission Scanning Electron Microscope. Multimode TM Atomic Force Microscope is used to obtain the film thickness. Transmission Electron Microscope JEOL JEM-2010 is used to characterize the structural and epitaxial relation of the as-grown PVK thin film.

Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

Van der Waals epitaxial growth had been thought to have trivial contribution on inducing substantial epitaxial strain in thin films due to its weak nature of van der Waals interfacial energy. Due to this, electrical and optical structure engineering via van der Waals epitaxial strain has been rarely studied. In this report, we show that significant band structure engineering could be achieved in a soft thin film material PbI 2 via van der Waals epitaxy. The thickness dependent photoluminescence of single crystal PbI 2 flakes was studied and attributed to the substrate-film coupling effect via incommensurate van der Waals epitaxy. It is proposed that the van der Waals strain is resulted from the soft nature of PbI 2 and large van der Waals interaction due to the involvement of heavy elements. Such strain plays vital roles in modifying the band gap of PbI 2. The deformation potential theory is used to quantitatively unveil the correlation between thickness, strain, and band gap change. Our hypothesis is confirmed by the subsequent mechanical bending test and Raman characterization. V

An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), and investigates its applications as a highly efficient field emitter and photocatalyst. The introduction of Cl-dopant in ZnO increases free electrons in the conduction band of ZnO and also leads to the rough surface of ZnO NWAs, which greatly improves the field emission properties of the Cl-ZnO NWAs/GF. The Cl-ZnO NWAs/GF demonstrates a low turn-on field (≈1.6 V μm(-1)), a high field enhancement factor (≈12844), and excellent field emission stability. Also, the Cl-ZnO NWAs/GF shows high photocatalytic efficiency under UV irradiation, enabling photodegradation of organic dyes such as RhB within ≈75 min, with excellent recyclability. The excellent photocatalytic performance of the Cl-ZnO NWAs/GF originates from the highly efficient charge separation efficiency at the heterointerface of Cl-ZnO and GF, as well as improved electron transport efficiency due to the doping of Cl. These results open up new possibilities of using Cl-ZnO and graphene-based hybrid nanostructures for various functional devices.