Mechanisms of radiation-induced flow in amorphous solids have been investigated using molecular dynamics computer simulations. It is shown for a model glass system, CuTi, that the radiation-induced flow is independent of recoil energy between 100 eV and 10 keV when compared on the basis of defect production and that there is a threshold energy for flow of approximately 10 eV. Injection of interstitial- and vacancylike defects induces the same amount of flow as the recoil events, indicating that point-defect-like entities mediate the flow process, even at 10 K. Comparisons of these results with experiments and thermal spike models are made.
We measure the solidification velocity of pure Ag as a function of undercooling temperature from the melting point (Tm=1235 K) to 0.6Tm using ultrafast, pump-probe laser experiments. The thickness of the liquid layer, while it solidifies, is measured using optical third harmonic generation. We show that velocity reaches a maximum value at 0.85Tm, and then remains nearly constant with additional undercooling. These results contradict simple collision-limited models, but they are in good agreement with molecular dynamics simulations presented here, which show that the crystallization velocity depends weakly on temperature from 0.85Tm to less than approximately 0.1Tm.
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