The integration of inorganic and organic materials has been demonstrated as an effective route for photoanodes to yield enhanced photoelectrochemical (PEC) water oxidation performance. In this study, we report the preparation of an inorganic/organic composite photoanode by depositing 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP) onto the surface of an Fe2O3/Fe2TiO5 heterostructure. It is found that the HEDP overlayer as an efficient and highly hydrophilic hole storage layer can effectively promote the surface charge dynamics by facilitating charge transfer and meanwhile by suppressing charge recombination. Consequently, the as-fabricated HEDP-Fe2O3/Fe2TiO5 photoanode exhibits an increased photocurrent density of 3.10 mA cm–2 at 1.23 V versus reversible hydrogen electrode (RHE) and a significant cathodic shift in the onset potential (∼120 mV). Furthermore, after the loading of FeNiOOH cocatalyst, a comparable photocurrent density of 3.40 mA cm–2 at 1.23 V versus RHE accompanied with a lowered onset potential are obtained. This work demonstrates an effective route to synthesize highly active hematite photoanodes via organic semiconductor integration.

Based on the equivalent circuit method, this paper adopts the nonlinear magnetostrictive constitutive relations to establish an analytical nonlinear magnetoelectric coefficient model for magnetostrictive/piezoelectric/magnetostrictive laminated magnetoelectric composites. When the pre-stress is set to zero in the model, the predicted results of the magnetoelectric coefficient coincide well with the available experimental results both qualitatively and quantitatively. Using the model, we can qualitatively predict the influence of the pre-stress, magnetic bias fields and the volume fraction of the magnetostrictive material on the magnetoelectric coefficient. The predicted results show that the influences of the pre-stress on the magnetoelectric coefficient, which varies with the magnetic bias field, before and after reaching the magnetoelectric coefficient maximum, are opposite. That is, the influence of the pre-stress on curves of the magnetoelectric coefficient reverses when the magnetoelectric coefficient reaches its maximum. Therefore, the correct setting of the pre-stress can lower the applied magnetic bias field and improve the magnetoelectric coefficient. The established nonlinear magnetoelectric effect model can provide a theoretical basis for regulating the magnetoelectric coefficient by the pre-stress and magnetic bias field and make it possible to design high-precision miniature magnetoelectric devices.

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