We report single crystal growth of CoSi, which has recently been recognized as a new type of topological semimetal hosting fourfold and sixfold degenerate nodes. The Shubnikov-de Haas quantum oscillation (QO) is observed on our crystals. There are two frequencies originating from almost isotropic bulk electron Fermi surfaces, in accordance with band structure calculations. The effective mass, scattering rate, and QO phase difference of the two frequencies are extracted and discussed.CoSi is a long known material with FeSi-type cubic structure (B20, space group P2 1 3), of which the thermoelectric property and application have been the focus of study [1,2], it is generally regarded as a semimetal. With the development of characterizing materials by the topology of their electronic band structure, it has recently been suggested that in crystalline systems, in addition to Dirac, Weyl, and nodal line semimetals, band crossing points (nodes) with three-, six-, or eight-fold degeneracies can be stablized [3], the low energy fermionic excitations close to the nodes are called "new fermions". For CoSi and isostructural transition metal silicides RhSi, RhGe, and CoGe, the crystal structure is asymmorphic with threefold rotation symmetry and twofold screw symmetry. Theoretical studies [4,5] found that with inclusion of spin-orbit-coupling (SOC), close to the Fermi level there only exist bands containing a fourfold degenerate node at the Brillouin zone (BZ) center Γ, and a sixfold degenerate node at BZ corner R, both are chiral, thus could serve as a model system in the study of unconventional chiral fermions. Besides, the phonon spectra of these monosilicides host double Weyl points [6]. Subsequent angle resolved photoemission spectrescopy (ARPES) measurements[7-9] have confirmed the overall bulk band structure and the existence of surface Fermi arcs. However, it has been noted that for CoSi preparation of a flat surface for ARPES is at least challenging. Therefore other probes of its bulk electronic structure are needed. At the same time, in the context of searching for feature characteristic of chiral fermions, the physical properties of CoSi are also worth revisiting on high quality single crystalline samples.In this work, we report single crystal growth by the flux method, different from the Czochralski, Bridgman, or chemical vapor transport techniques previously used. The resulting crystals are of decent quality. To our knowledge, this is the first time SdH is observed in CoSi. The angular dependence of the QO frequencies reveals that they are from the bulk electron Fermi surface centered at R in BZ, agreeing with band calculation and * gli@iphy.ac.cn † jlluo@iphy.ac.cn ARPES data. Thus, it is a good starting point for further investigations.The single crystal growth starts with Co powder (99.999%, Alfa), Si powder (99.999%, Alfa), and Sn grains (99.99%), which were mixed with a molar ratio of 1:1:20, loaded into an alumina crucible, then sealed with a partial Ar pressure inside a silica capsule. The reactant was quic...

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We systematically study the role of Weyl cone tilting in the spin Hall effect of light (SHEL) in doped Weyl semimetals (WSMs), and propose a new scheme to determine the type of a WSM and to sense the tilt degree of Weyl cones precisely. It is found that in the case of a small amount of doping, the SHEL in type-I WSMs shows almost no dependence on the tilt degree of Weyl cones, while the SHEL in type-II WSMs is extremely sensitive to variations in the degree of tilt. However, in the case of a large amount of doping, not only the SHEL in type-II WSMs but also the SHEL in type-I WSMs show strong dependences on the tilt degree. These trends are mainly attributed to the variation of the real part of the Hall conductivity with the tilt degree. Remarkably, by using a quantum weak measurement, the tiny SHEL shifts can be amplified and detected to a desirable accuracy. Based on the obviously different tilt-dependent characteristics of amplified SHEL shifts in WSMs, we propose a new scheme to determine the type of a WSM and to sense the tilt degree precisely. By adjusting the doping level, the sensing sensitivity can reach up to 1461.55 µm per degree of tilt. This study may provide an application reference for the fabrication of WSM parameter sensors and other topological photoelectric devices.