Electric-pulse induced resistance hysteresis switching loops for Pr0.7Ca0.3MnO3 perovskite oxide films were found to exhibit an additional sharp "shuttle tail" peak around the negative pulse maximum for films deposited in an oxygen-deficient ambient. The resistance relaxation in time of this "shuttle tail" peak as well as resistance relaxation in the transition regions of the resistance hysteresis loop show evidence of oxygen diffusion under electric pulsing, and support a proposed oxygen diffusion model with oxygen vacancy pileup at the metal electrode interface region as the active process for the nonvolatile resistance switching effect in transition-metal oxides.

As a promising one-dimensional material for building nanodevices, single-wall carbon nanotubes (SWNTs) should be organized into a rational architecture on the substrate surface. In this study, horizontally aligned SWNTs with two alignment modes were synthesized on the same R-plane sapphire wafer by chemical vapor deposition with cationized ferritins as catalysts. In the middle part of the wafer, SWNTs were aligned on the R-plane sapphire in the direction [1101]. At the edge of the wafer, SWNTs were aligned in the tangential direction to the wafer edge. The comparison of these two groups of SWNTs suggests the competition between the two alignment modes and indicates that atomic steps in high density have superior influence on the SWNTs' alignment to the crystal structure on the surface of the sapphire substrate. A "raised-head" growth mechanism model is proposed to explain why catalysts can stay active during the horizontally aligned growth of relatively long SWNTs with the strong interaction between SWNTs and the sapphire substrate.

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