The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, Φ = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm/V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.
High-power impulse magnetron sputtering (HiPIMS) was used to deposit titanium nitride (TiN) thin films with high electron density as alternative plasmonic materials. TiN thin films with thicknesses of 20-40 nm were deposited with different average sputtering powers, and exhibited metallic-and dielectric-like optical properties. When the sputtering power was increased from 80 W to 300 W, denser polycrystalline TiN thin films were obtained at room temperature (RT) with a conductivity 25 times that of the low-sputtering-power film. With sufficient average power (≥ 180 W), the films exhibited metallic-like optical properties, and a conductivity of >10 5 S/m. By using HiPIMS deposition, good-quality metallic-like TiN thin films could be fabricated at RT without heating the substrate.
Objective. This study assessed the posttreatment tumor control and auditory function of vestibular schwannoma (VS) patients after CyberKnife (CK) and analyzed the possible prognostic factors of hearing loss. Methods. We retrospectively studied 117 VS patients, with Gardner-Robertson (GR) classification grades I to IV, who underwent CK between 2006 and 2012. Data including radiosurgery treatment parameters, pre- and postoperative tumor size, and auditory function were collected and examined. Results. With CK, 117 patients had excellent tumor control rates (99.1%), with a mean imaging followup of 61.1 months. Excluding 52 patients (GR III-IV pretreatment), 53 (81.5%) of the remaining 65 patients (initial GR I-II) maintained GR I or II hearing after CK, with a mean audiometric followup of 64.5 months. Twelve patients experienced hearing degradation (91.6% were GR II pretreatment); they appeared to have significantly larger tumor sizes, significantly smaller cochlear sizes, and higher prescribed cochlear doses, compared to the patients with preserved hearing. Conclusion. Our data showed that CK treatment provided an excellent tumor control rate and a comparable hearing preservation rate in VS patients. Patients with pretreatment GR II hearing levels, larger tumor volumes, smaller cochlear sizes, and higher prescribed cochlear doses may have poor hearing prognoses.
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