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Metal halide perovskite nanocrystals (NCs) have emerged as new-generation light-emitting materials with narrow emissions and high photoluminescence quantum efficiencies (PLQEs). Various types of perovskite NCs, e.g., platelets, wires, and cubes, have been discovered to exhibit tunable emissions across the whole visible spectrum. Despite remarkable advances in the field of perovskite NCs, many nanostructures in inorganic NCs have not yet been realized in metal halide perovskites, and producing highly efficient blue-emitting perovskite NCs remains challenging and of great interest. Here, we report the discovery of highly efficient blue-emitting cesium lead bromide (CsPbBr3) perovskite hollow NCs. By facile solution processing of CsPbBr3 precursor solution containing ethylenediammonium bromide and sodium bromide, in situ formation of hollow CsPbBr3 NCs with controlled particle and pore sizes is realized. Synthetic control of hollow nanostructures with quantum confinement effect results in color tuning of CsPbBr3 NCs from green to blue, with high PLQEs of up to 81%.

Here we show that addition of Hf to Nb4Ta can significantly improve the high field performance of Nb3Sn, making it suitable for dipole magnets for a machine like the 100 TeV future circular collider (FCC). A big challenge of the FCC is that the desired non-Cu critical current density (Jc) target of 1500 A/mm 2 (16 T, 4.2 K) is substantially above the best present Nb3Sn conductors doped with Ti or Ta (~1300 A/mm 2 in the very best sample of the very best commercial wire). Recent success with internal oxidation of Nb-Zr precursor has shown significant improvement in the layer Jc of Nb3Sn wires, albeit with the complication of providing an internal oxygen diffusion pathway and avoiding degradation of the irreversibility field HIrr. We here extend the Nb1Zr oxidation approach by comparing Zr and Hf additions to the standard Nb4Ta alloy of maximum Hc2 and Hirr. Nb4Ta rods with 1Zr or 1Hf were made into monofilament wires with and without SnO2 and their properties measured over the entire superconducting range at fields up to 31 T. We found that group IV alloying of Nb4Ta does raise HIrr, though adding O2 still degrades this slightly. As noted in earlier Nb1Zr work with an O source, the pinning force density Fp is strongly enhanced and its peak value shifted to higher field by internal oxidation. A surprising result of this work is that we found better properties in Nb4Ta1Hf without SnO2, FpMax achieving 2.35 Times that of the standard Nb4Ta alloy, while the oxidized Nb4Ta1Zr alloy achieved 1.54 times that of the Nb4Ta alloy. The highest layer Jc(16 T, 4.2 K) of 3700 A/mm 2 was found in the SnO2free wire made with Nb4Ta1Hf alloy. Using a standard A15 cross-section fraction of 60% for modern PIT and RRP wires, we estimated that a non-Cu Jc of 2200 A/mm 2 is obtainable in modern conductors, well above the 1500 A/mm 2 FCC specification. Moreover, since the best properties were obtained without SnO2, the Nb4Ta1Hf alloy appears to open a straightforward route to enhanced properties in Nb3Sn wires manufactured by virtually all the presently used commercial routes employed today.

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