This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the
crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.
This paper investigates the reactive sputter deposition of tungsten carbide (WCx) films for replacing hexavalent chromium which was found to cause cancer in human body. The deposition rate of the films was proportional to rf-power and inversely proportional to the CH4 content in the sputtering gas. The hardness of the WCx coatings increased as the rf-power increased. The highest hardness was obtained at the CH4 concentration of 10 vol.% in the sputtering gas. The hardness of the WCx film deposited under optimal conditions was far higher than that of the electroplated chromium film although the corrosion-resistance of the former was slightly inferior to that of the latter. Considering all these experimental results, it may be concluded that the reactive sputterdeposition of WCx coatings can be effectively applied to the parts with complex geometries as an alternative to chromium electroplating.
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