Biofeedback systems have been extensively used in walking exercises for gait improvement. Past research has focused on modulating the wearer’s cadence, gait variability, or symmetry, but none of the previous works has addressed the problem of inducing a desired walking speed in the wearer. In this paper, we present a new, minimally obtrusive wearable biofeedback system (WBS) that uses closed-loop vibrotactile control to elicit desired changes in the wearer’s walking speed, based on the predicted user response to anticipatory and delayed feedback. The performance of the proposed control was compared to conventional open-loop rhythmic vibrotactile stimulation with N = 10 healthy individuals who were asked to complete a set of walking tasks along an oval path. The closed-loop vibrotactile control consistently demonstrated better performance than the open-loop control in inducing desired changes in the wearer’s walking speed, both with constant and with time-varying target walking speeds. Neither open-loop nor closed-loop stimuli affected natural gait significantly, when the target walking speed was set to the individual’s preferred walking speed. Given the importance of walking speed as a summary indicator of health and physical performance, the closed-loop vibrotactile control can pave the way for new technology-enhanced protocols for gait rehabilitation.
High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 °C and ex situ annealing at 400 °C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power- and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in optoelectronic devices for monolithic optical-electronic integration circuits.
Interlaboratory comparisons of the quantized Hall resistance are essential to verify the international coherence of primary impedance standards. Here we report on the investigation of the stability of p-doped graphene-based quantized Hall resistance devices at direct and alternating currents at CMI, KRISS, and PTB. To improve the stability of the electronic transport properties of the polymer encapsulated device, it was shipped in an over-pressurized transport chamber. The agreement of the quantized resistance with RK/2 at direct current was on the order of 1 nΩ/Ω between 3.5 T and 7.5 T at a temperature of 4.2 K despite changes in the carrier density during the shipping of the devices. At alternating current, the quantized resistance was realized in a double-shielded graphene Hall device. Preliminary measurements with digital impedance bridges demonstrate the good reproducibility of the quantized resistance near the frequency of 1 kHz within 0.1 μΩ/Ω throughout the international delivery.
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