Understanding
the physics that correlate strain and physical properties of quantum
dots (QDs) is crucial for technology applications. In this paper,
GaAs QDs confined in Al2O3 matrix are synthesized
using the pulsed laser deposition method and rapid thermal annealing
technique. It is revealed that the confined GaAs QDs experience compressive
strain during the growth process. The strain can be used to improve
and tailor the optical properties of confined GaAs QDs by engineering
the bandgap and thus the photoluminescence emission band to a distinct
wavelength. These findings presented here can engineer the properties
of GaAs QDs for potential application in optoelectronic and photonic
devices.
Hydrogen passivation can be used to improve and tailor the optical properties of confined Au nanoparticles by engineering the strain and interfacial defects of the confined Au nanoparticles.
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