The O 2 adsorption and dissociation on M-doped (M=Al, Ag, W) Cu ( 111) surface were studied by density functional theory. The adsorption energy of adsorbate, the average binding energy and surface energy of Cu surface, and the doping energy of doping atom were calculated. All the doped atoms can be stably combined with Cu atoms and improve the surface activity of Cu surface, while the Al and W atoms would strengthen the bonding effect between the atoms on the Cu (111) slab except Ag doping atom. Due to the different electronegativity of three metals of Al, Ag, W, these doping atoms can resist the dissociation of O 2 by DOS analysis. The potential energy surface was computed, and the result showed that the dissociation reaction of O 2 on the surfaces not only reflected in the barrier energy, but also the reaction energy. Ag atoms had the best resistance effect on the O 2 dissociation comparing with Al and W atoms because of the large barrier energy and reaction energy.
SF6 gas leak is a common issue that needs to be addressed for Gas insulated switchgear (GIS). In this paper, typical gas leaking defects of GIS are described with the reason leading to them. A cost-effective online sealing technology based on adhesion and gas diversion is established and a case study is presented. Besides, an analytical model which can be used to predict the pressure evolution for the leaking component as well as in the sealing zone is proposed. It has been shown that this technique can be applied to sealing SF6 gas leak of GIS components with different shape and structure.
The O2 adsorption and dissociation on M‐doped (M = Cu, Ag, W) Al(111) surface were studied by density functional theory. The adsorption energy of adsorbate, the average binding energy and surface energy of Al surface, and the doping energy of doping atom were calculated. All the doped atoms can be stably combined with Al atoms, while being slightly embedded in the surface to a certain depth. The TOP‐type surfaces are the most stable doped surfaces for O2 adsorption, which is related to the orbital hybridization between the adsorbate and the surface atoms, the electronegativity, and the orbital energy level of the doping atoms. Moreover, the O atoms and doping atoms contribute significantly to the density of states (DOS), especially the O‐p orbital electrons and the d orbital electrons of doping atoms. The degree of O2 dissociation is related to the doping atoms on Al surfaces, and the doping atoms actually resist the dissociation of O2. W atoms have the best resistance effect on the O2 dissociation as compared with Cu and Ag atoms, especially W‐1NN surface, which has both large barrier energy and reaction energy.
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