Photoluminescence (PL) thermal quenching properties of zinc sulfide (ZnS) films, which were grown by mist chemical vapor deposition (mist‐CVD), were systematically investigated. The samples were grown from thiourea‐based solutions at various temperatures. Strong PL emissions related to S vacancies were observed from the sample grown at 600 and 700 °C and their thermal quenching properties were very small. PL spectra from the sample grown at 500 °C contains zinc oxide (ZnO) related peaks. The ZnO related PL peaks has almost no energy shift with the increase of temperature. This would be due to the mismatch of thermal expansion coefficient between ZnS and ZnO.

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