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PACS. 21.65 -Nuclear matter.PACS. 21.10R -Collective structure in levels (inc. rotational bands). PACS. 21.60E -Collective models. PACS. 23.20 -Electromagnetic transitions.Abstract. -Rotational states and electromagnetic transitions among them are studied in a deformed even mass nucleus by a microscopic calculation. Spectra, E2 and M1 matrix elements among different bands are studied by diagonalization-after-projection. The Z Z -1 E 2 and M1 transitions among the p a s t states show a marked dependence on the even and odd angular momenta (signature dependence). The favoured transitions are those for which the angularmomentum change is in phase with the change in the core rotation.

This study aims to develop a novel in‐plane switching liquid crystal display with a fast response time, known as short‐range lurch control in‐plane switching (SLC‐IPS) mode. We found that the distance l, which is orthogonal to the liquid crystal layer thickness, affects the response properties of the liquid crystal display mode. The distance l was obtained using a simple electrode structure. The SLC‐IPS obtained by this structure exhibits a response that is approximately three times faster than that of a conventional IPS. We applied the SLC‐IPS to virtual reality head‐mounted displays and confirmed that its response properties satisfy the requirements for moving picture quality.

Layers of mixed platinum and silicon were formed on p~-n junction silicon single crystal wafers (hereafter abbreviated as p~n-Si) by depositing Pt on the p~-Si surface, followed by heating at 320~176 ESCA studies showed that Pt silicide (PtSi, or in some cases a mixture of PtSi and Pt2Si) was formed when a 3-5 nm-thick Pt layer on Si was heated, whereas a nonstoichiometric, St-rich Pt-Si intermixed layer was formed when an ultrathin Pt layer (1.0 nm thick) on Si was heated. It was also confirmed that, in the former case, a majority of the deposited Pt remained in the form of pure metal when Pt-deposited silicon was exposed to air for ca. one day before heating. The p+n-Si photoanode covered with Pt silicide gave photocurrent-voltage characteristics nearly the same as the previously reported Pt-coated p~n-Si photoanode in a hydrogen iodide/iodine solution, indicating that Pt silicide formation does not affect the photovoltage at the p+-n junction. The photocurrent of ca. 14 mAcro -2 at the maximum power point was maintained for 400h under continued illumination and only slightly reduced after 4500h (-6.3 months). The p~n-Si electrode covered with the Pt-Si intermixed layer gave a short-circuit photocurrent higher than that covered with Pt silicide by virtue of the higher light transmittance in the layer, but was somewhat inferior in photocurrent stability. ESCA studies of the electrodes after long-term stability tests revealed that some platinum was lost in the outermost layer, suggesting that the decay of the fill factor is mainly due to the chemical change at the top surface in both the case of Pt silicide and of the Pt-Si intermixed layer.Many studies have been made on semiconductor photoelectrochemical (PEC) cells in view of the direct conversion of solar energy into storable chemical energy. It has become clear that the main difficulty in this method lies in the fact that all known semiconductor electrodes having suitable bandgaps are unstable in electrolyte solutions. Various attempts have been made to stabilize such semiconductor electrodes. A method applicable to chemical conversion is coating the electrodes with thin layers of protective materials such as noble metals (1), metal oxides (2, 3), metal silicides (4), organic materials (5-7), and boron phosphide (8). Some coating materials also act as catalysts for photoelectrode reactions (9-12).We reported previously (13) that a p~n-Si photoanode coated with 2-3 nm-thick Pd or Pt metal photoelectrolyzes hydrogen iodide into hydrogen and iodine without external bias, with a high solar-to-chemical conversion efficiency of ca. 8%. The photocurrent was stable for 500h in the case of Pt coating. Nearly the same results were obtained with n~p-