This work indicates that the growth of silicon nitride by direct nitridation is self-limiting. One has to assume that diffusion of N or Si through the nitride film is so slow at the deposition temperatures investigated that it is practically nonexistent. Similar results were obtained by Clark (12) of our laboratory. Using a glow discharge to produce atomic nitrogen, he found it impossible to diffuse nitrogen into Si to any extent at 1200~ but in all cases formed a thin silicon nitride layer, which effectively stopped any nitrogen diffusion. It appears then that silicon nitride can be produced from the elements as stated in the literature, in a practical sense, only if silicon is present as a powder. Thus, if useful silicon nitride films are the objective one appears to be limited to chemical vapor deposition techniques.
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