Tricomponent exciplex-based organic light-emitting diodes
(TE-OLEDs)
with high- and low-energy exciplexes have recently gained much attentions
because of their already-reported high external quantum efficiency
(EQE) and their exciplex-to-exciplex energy transfer (EE-ET) is considered
as an important factor to influence the device performance. However,
few works provide evidence to prove this EE-ET process due to the
lack of the absorption band of exciplexes. Herein, the EE-ET channel
from a high-energy exciplex donor (EXED) to another low-energy
exciplex acceptor (EXEA) in a TE-OLED is demonstrated by
probing magnetic field effects (MFEs) on the electrical and optical
properties of devices including magneto-conductance (MC), magneto-efficiency
(Mη), and magneto-electroluminescence (MEL), because this EE-ET
can influence the evolution channels of spin-pair states in the TE-OLED
which could be visualized by these featured MFE traces. Specifically,
all the MC, Mη, and MEL curves of the single EXED-based OLED depict the normal bias-current (I)-dependent
intersystem crossing (ISC) from singlet to triplet polaron pairs,
which weakens with increasing I. Moreover, the Mη
and MEL traces of the single EXEA-based OLED, respectively,
present the abnormal and normal I-dependent ISC,
while its MC curves show the conversion from reverse ISC (RISC) of
exciplexes to ISC of polaron pairs with increasing I. However, both MEL and Mη traces of the TE-OLED with simultaneous
EXED and EXEA show the abnormal I-dependent RISC from triplet to singlet exciplexes, which enhances
with increasing I, while its MC traces display normal I-dependent RISC. These RISC behaviors have seldom been
observed previously in the literature, which are induced by the EE-ET
process from EXED to EXEA that facilitate the
RISC channel of EXEA via increasing the quantity of triplet
exciplex states. Moreover, higher EQE is obtained in the TE-OLED with
this EE-ET channel from EXED to EXEA than the
single EXEA-based OLED. Thus, these MFE measurements provide
new strategies for recognizing the EE-ET process in OLEDs based on
multiple exciplex emitter systems and pave the way for designing superior
performance exciplex-based OLEDs.
High external quantum efficiency (EQE) up to 25% has recently been reported from tetra(t-butyl)rubrene (TBRb)-based organic light-emitting diodes (OLEDs), but its physical origin is still vague. Herein, using the featured responses of the evolution processes of electron-hole pairs to an external magnetic field, an unreported high-level reverse intersystemcrossing (HL-RISC) from upper-level triplet to lowest singlet excitons (T 2 →S 1 ) is observed when T 2 is well confined in the active layer of pure TBRb. This HL-RISC channel becomes stronger with lowering operational temperatures because it is not an endothermic process. Due to the larger separation distance of TBRb molecules with four tert-butyl groups, the intersystemcrossing (ISC) process of polaron pairs is stronger than the singlet fission (SF) process existing in pure TBRb, which is markedly different from the behaviors of excited states in pure rubrene (Rb) with negligible ISC and strong SF. More importantly, HL-RISC is stronger in TBRb than in Rb-doped systems, which is consistent with the higher EQE frequently reported from TBRb-doped OLEDs. Thus, this work deepens the physical understanding of microscopic processes in typical organic multi-functional semiconductors of TBRb or Rb and paves the way for fabricating further high-efficiency yellow OLEDs.
The
molecular aggregation effect on the photophysical properties
of many organic semiconductors has been well studied, but this behavior
of rubrene molecules is still vague in rubrene-doped organic light-emitting
diodes. Surprisingly, via recording temperature-dependent electroluminescence
and photoluminescence spectra, an intriguing H-type aggregation of
rubrene molecules is realized from rubrene-doped devices and films
only when 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA) or 4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2TNATA) is selected
as the host; otherwise, the J-type aggregation of rubrene molecules
is solely observed. We propose that this H-type aggregation is caused
by the increased steric hindrance between adjacent rubrene molecules
because the unique molecular structures of 12 freely rotating chemical
bonds in m-MTDATA or 2TNATA are suppressed in rubrene-doped
solid-state films. More importantly, we find that the H-type aggregation
of rubrene molecules induces a nearly 3-fold increase in the fluorescence
of rubrene-doped devices at 20 K. The increased fluorescence can be
mainly attributed to the intensified triplet–triplet annihilation
(TTA) process because the parallel alignment of transition dipole
moments in H-aggregation can facilitate the TTA process via enlarging
the TTA reaction cross-section. Thus, our findings deepen the understanding
of molecular interactions in aggregation systems and pave the way
for achieving highly efficient devices operated especially in a low-temperature
environment such as outer space.
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