We presented a high pulse repetition frequency (PRF) all-solid-state 1053 nm Nd:YLF laser with laser diode (LD) end-pumped and acousto-optic (AO) Q-switching configuration. When the PRF reached 50 kHz, 1.12 W average power and 541 W peak power was obtained, corresponding to the optical-optical efficiency of 31.2% and the pump power of 3.58 W, and the pulse width was compressed to 41.4 ns with the ultrashort cavity length of 40 mm, and the pulse instability smaller than 4%. The beam quality factors and the angle drift were measured as M The experimental setup of high pulse repetition frequency allsolid-state 1053 nm laser

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A high quality ultra-thin plasma nitrided oxide (EOT~12.5Å) is fabricated by the clustering of gate dielectric process in a production-worthy tool. Compared to conventional plasma nitrided oxide process, cluster process shows 1.2 Å reduction in inversion oxide thickness (Tox_inv) due to less moisture induced-oxide re-growth and nitrogen out diffusion. In addition to significant Tox_inv reduction, cluster process offers devices that exhibit better device performance and superior reliability characteristics in terms of SCE, Vt roll-off, DIBL and 2X lifetime improvement in NBTI, thus making it very promising for sub-90nm CMOS.