No abstract

No abstract

Grain boundaries play a key role in the performance of thin‐film optoelectronic devices and yet their effect in halide perovskite materials is still not understood. The biggest factor limiting progress is the inability to identify grain boundaries. Noncrystallographic techniques can misidentify grain boundaries, leading to conflicting literature reports about their influence; however, the gold standard – electron backscatter diffraction (EBSD) – destroys halide perovskite thin films. Here, this problem is solved by using a solid‐state EBSD detector with 6000 times higher sensitivity than the traditional phosphor screen and camera. Correlating true grain size with photoluminescence lifetime, carrier diffusion length, and mobility shows that grain boundaries are not benign but have a recombination velocity of 1670 cm s−1, comparable to that of crystalline silicon. Amorphous grain boundaries are also observed that give rise to locally brighter photoluminescence intensity and longer lifetimes. This anomalous grain boundary character offers a possible explanation for the mysteriously long lifetime and record efficiency achieved in small grain halide perovskite thin films. It also suggests a new approach for passivating grain boundaries, independent of surface passivation, to lead to even better performance in optoelectronic devices.

Optoelectronic devices based on hybrid perovskites have demonstrated outstanding performance within a few years of intense study. However, commercialization of these devices requires barriers to their development to be overcome, such as their chemical instability under operating conditions. To investigate this instability and its consequences, the electric field applied to single crystals of methylammonium lead bromide (CH NH PbBr ) is varied, and changes are mapped in both their elemental composition and photoluminescence. Synchrotron-based nanoprobe X-ray fluorescence (nano-XRF) with 250 nm resolution reveals quasi-reversible field-assisted halide migration, with corresponding changes in photoluminescence. It is observed that higher local bromide concentration is correlated to superior optoelectronic performance in CH NH PbBr . A lower limit on the electromigration rate is calculated from these experiments and the motion is interpreted as vacancy-mediated migration based on nudged elastic band density functional theory (DFT) simulations. The XRF mapping data provide direct evidence of field-assisted ionic migration in a model hybrid-perovskite thin single crystal, while the link with photoluminescence proves that the halide stoichiometry plays a key role in the optoelectronic properties of the perovskite.

Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr3 thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain that arises from cooldown from crystallization is detrimental to material stability under X-ray irradiation. We also find that the optical photoluminescence red shifts as a result of the out-of-plane compressive strain. The sensitivity of bandgap to strain suggests possible applications such as stress-sensitive sensors.Mosaicity, the formation of small misorientations in neighboring crystalline domains we observe in some CsPbBr3 single crystals, indicates the significant variations in crystal quality that can occur even in single-crystal halide perovskites. The nano-diffraction results suggest that reducing local strains is a necessary path to enhance the stability of perovskite optoelectronic materials and devices from light-emitting diodes to high-energy detectors.