Perovskite solar cells (PSCs) are currently attracting a great deal of attention for their excellent photovoltaic properties, with a maximum photoelectric conversion efficiency (PCE) of 25.5%, comparable to that of silicon-based solar cells. However, PSCs suffer from energy level mismatch, a large number of defects in perovskite films, and easy decomposition under ultraviolet (UV) light, which greatly limit the industrial application of PSCs. Currently, quantum dot (QD) materials are widely used in PSCs due to their properties, such as quantum size effect and multi-exciton effect. In this review, we detail the application of QDs as an interfacial layer to PSCs to optimize the energy level alignment between two adjacent layers, facilitate charge and hole transport, and also effectively assist in the crystallization of perovskite films and passivate defects on the film surface.

Inverted perovskite solar cells (PSCs) have been extensively studied by reason of their negligible hysteresis effect, easy fabrication, flexible PSCs and good stability. The certified photoelectric conversion efficiency (PCE) achieved 23.5% owing to the formed lead−sulfur (Pb−S) bonds through the surface sulfidation process of perovskite film, which gradually approaches the performance of traditional upright structure PSCs and indicates their industrial application potential. However, the fabricated devices are severely affected by moisture, high temperature and ultraviolet light due to the application of organic materials. Depending on nitrogen, cost of protection may increase, especially for the industrial production in the future. In addition, the inverted PSCs are found with a series of issues compared with the traditional upright PSCs, such as nonradiative recombination of carriers, inferior stability and costly charge transport materials. Thus, the development of inverted PSCs is systematically reviewed in this paper. The design and fabrication of charge transport materials and perovskite materials, enhancement strategies (e.g., interface modification and doping) and the development of all−inorganic inverted devices are discussed to present the indicator for development of efficient and stable inverted PSCs.

As the third generation of new thin-film solar cells, perovskite solar cells (PSCs) have attracted much attention for their excellent photovoltaic performance. Today, PSCs have reported the highest photovoltaic conversion efficiency (PCE) of 25.5%, which is an encouraging value, very close to the highest PCE of the most widely used silicon-based solar cells. However, scholars have found that PSCs have problems of being easily decomposed under ultraviolet (UV) light, poor stability, energy level mismatch and severe hysteresis, which greatly limit their industrialization. As unique materials, quantum dots (QDs) have many excellent properties and have been widely used in PSCs to address the issues mentioned above. In this article, we describe the application of various QDs as additives in different layers of PSCs, as luminescent down-shifting materials, and directly as electron transport layers (ETL), light-absorbing layers and hole transport layers (HTL). The addition of QDs optimizes the energy level arrangement within the device, expands the range of light utilization, passivates defects on the surface of the perovskite film and promotes electron and hole transport, resulting in significant improvements in both PCE and stability. We summarize in detail the role of QDs in PSCs, analyze the perspective and associated issues of QDs in PSCs, and finally offer our insights into the future direction of development.

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