The strength of TFT glass is mainly affected glass material. While reducing the film thickness, profile angle or increasing the organic film through process and material selection can reduce the sudden change of film characteristics, slow transition film stress and increase the bending resistance of TFT glass.
This paper introduces a phenomenon of the SD bump on the gate layer MoNiTi(bottom)/Cu(top) in GI hole because of the worsening of adhesion between SD layer and gate layer after the copper oxides form on the top copper surface of gate layer. We investigated the relationship of the SD bump with TFT array processes and solved the SD bump issue by reducing the power, gas flow ratio (O2/SF6) or O.E.(%) time of GI etching process. Because these changes of GI etching parameter can decrease the amount and lower the energy of O * and S * free radical in GI etching chamber.
In this paper, "IGZO deposition" and "IGZO Photo" are found to be the critical steps that occurs for ESD in Oxide TFTs. The mechanism of ESD has been studied, furthermore, several improvement methods has been proposed.
This paper presents a mode to solve visibility issue of touch panel by regulating border profile of sensor pattern. The pattern profile can be effectively optimized by adjusting soft-bake process parameter, mainly temperature and time. This process method is more convenient and lower-cost than the selecting and fabrication of IM layer.
Herein the Block Mura is discussed. We analyze the formation mechanism of Block Mura in the ITO developing process with CFD simulation. A detailed study has carried out on the design of 2 nd ITO layer. Experimental results show that Block Mura can be quickly and effectively solved by using CFD simulation.
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