A novel 3.3 kV-rated 4H-SiC trench PiN structure (T-PiN) which features trench P+ layer is proposed and experimentally demonstrated. For the T-PiNs, dry etch onto N-drift layer is added to the manufacturing process of conventional PiNs (Con-PiNs) before Al ion implantation step. As the experimental results show, the forward current of the T-PiN diode with active area of 5 mm*5 mm has been improved by 32.3% at the voltage of 4 V. The T-PiN is identical to Con-PiN in other static and surge current capability except for sacrificing a little breakdown voltage and dynamic characteristics of T-PiN. This superior forward conduction ability of the T-PiNs results from enhanced anode carrier injection caused by enhanced conductance modulation effect and larger anode carrier injection area. And an enhanced conductance modulation effect model was set up to quantify the increasement proportion of current density in T-PiN.
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