A new and exciting technique for performing DLC deposition on the inside of cylindrical substrates, in particular pipes, will be described. Using the hollow cathode effect (HCE), a high density plasma can be generated within such cylindrical substrates by using Plasma Enhanced Chemical Vapor Deposition (PECVD). As the pipe itself is the vacuum chamber, such high density plasmas can be maintained by using asymmetric bipolar direct current (DC) pulsed power. Very high deposition rates can thus be achieved of the order of 1micron/min. A hydrocarbon precursor (C 2 H 2 ) is used to deposit thick DLC films which are inert and have a high corrosion resistance. Adhesion to the metallic substrate is improved by adding silicon to the DLC layer. These films also have excellent erosion and wear resistant properties and the process can be optimized depending on what film properties are most vital for whatever application the coating is required for. Corrosion and wear resistance are also improved by having a pure DLC layer on top of the deposited structure. The actual process and deposition system will be described in detail as well as how the technology works and how such high density plasmas can be maintained for various lengths and diameters of pipe. Testing of such novel DLC films was done by various techniques and results will be shown of hardness, adhesion, layer thickness, wear and corrosion resistance. A vast number of applications can greatly benefit from this novel process, on both a large and small scale. Examples of such applications would be industrial piping, offshore drilling, chemical delivery systems, gun barrels and medical devices.
Measurement of N+ 4 recombination rate vs electron temperature in a proton beam created plasma J. Chem. Phys. 81, 1753 (1984); 10.1063/1.447846Effect of nbutane impurity on electron mobility and electron-ion recombination rate constant in solid neopentane
We have measured rates of recombination of electrons with simple molecular ions in the presence of helium at densities from 2.5×1019 to 2.9×1020 cm−3 at reduced temperatures of 77, 125, and 150 K. The results agree surprisingly well with the neutral, collisional recombination mechanism proposed by Bates and Khare for atomic ions recombining in plasmas of high neutral density.
Results of the non-linear interaction of an extremely short (0.6 ns) high power (∼500 MW) X-band focused microwave beam with the plasma generated by gas ionization are presented. Within certain gas pressure ranges, specific to the gas type, the plasma density is considerably lower around the microwave beam axis than at its periphery, thus forming guiding channel through which the beam self-focuses. Outside these pressure ranges, either diffuse or streamer-like plasma is observed. We also observe high energy electrons (∼15 keV), accelerated by the very high-power microwaves. A simplified analytical model of this complicated dynamical system and particle-in-cell numerical simulations confirm the experimental results.
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