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Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe 2 with silicon waveguide for onchip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW•Hz −0.5 , a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit•s −1 . The achieved PdSe 2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.

The introduction of phosphonium cations increases the ferroelastic phase transition temperature of [(CH3)3PCH2CH2CH3]2(n-C4H9NH3)Bi2Br9 to above room temperature.

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