Lead halide perovskites have gained tremendous attentions in many fields, especially in nanolasers, owing to the excellent optoelectronic properties. However, the underlying lasing mechanism is not clear in both plasmonic and photonic nanolasers at room temperature. Here, the plasmonic lasers and the photonic counterparts based on organic–inorganic hybrid lead tri‐bromine perovskite nanowires are achieved at room temperature and are compared in terms of lasing evolution, lasing wavelengths, and lasing dynamics. The same spectra evolution and the same emission wavelength indicate that the plasmonic and the photonic CH3NH3PbBr3 nanowire lasers have the same gain origination. The calculated Mott density lower than the threshold density and lasing photon energy lower than exciton energy prove that an electron–hole plasma contributes to both the two types of lasing actions from perovskite nanowires at room temperature. The work deepens the understanding of underlying mechanism of perovskite nanowire lasers.
Nanofabrication schemes usually suffer
challenges in direct growth
on complex nanostructured substrates. We provide a new technology
that allows for the convenient, selective growth of complex nanostructures
directly on three-dimensional (3D) homogeneous semiconductor substrates.
The nature of the selectivity is derived from surface states modulated
electrochemical deposition. Metals, metal oxides, and compound semiconductor
structures can be prepared with high fidelity over a wide scale range
from tens of nanometers to hundreds of microns. The utility of the
process for photoelectrochemical applications is demonstrated by selectively
decorating the sidewalls and tips of silicon microwires with cuprous
oxide and cobalt oxides catalysts, respectively. Our findings indicate
a new selective fabrication concept applied for homogeneous 3D semiconductor
substrates, which is of high promise in community of photoelectronics,
photoelectrochemistry, photonics, microelectronics, etc.
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