The design and characteristics of a junctionless (JL) bulk FinFET were compared with the silicon-on-insulator (SOI) JL nanowire transistor (JNT) using 3-D quantum transport device simulation. The JL bulk FinFET exhibits a favorable ON/OFF current ratio and short-channel characteristics by reducing the effective channel thickness that is caused by the channel/substrate junction. The drain-induced barrier lowering and the subthreshold slope are about 40 mV and 73 mV/dec, respectively, with an ON/OFF current ratio of 10 5 at W = 10 nm. The JL bulk FinFET is less sensitive to the channel thickness than the SOI JNT. Furthermore, the threshold voltage V th of the JL bulk FinFET can be easily tuned by varying substrate doping concentration N sub . The modulation range of V th as N sub changes from 10 18 to 10 19 cm −3 , which is around 30%. Index Terms-Fin-shaped field-effect transistor (FinFET), junctionless (JL), 3-D simulation.
TiO 2 nanotubes promoted with Pt metal were prepared and tested to be the photocatalytic dehydrogenation catalyst in neat ethanol for producing H 2 gas ðC 2 H 5 OH ! C 3 CHO þ H 2 Þ. It was found that the ability to produce H 2 , the liquid phase product distribution and the catalyst stability of these promoted nano catalysts all depended on the Pt loading and catalyst preparation procedure. These Pt/TiO 2 catalysts with TiO 2 nanotubes washed with diluted H 2 SO 4 solution produced 1, 2-diethoxy ethane (acetal) as the major liquid phase product, while over those washed with diluted HCl solution or H 2 O, acetaldehyde was the major liquid phase product.
This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10 8 because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the shortchannel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.Index Terms-Gate-all-around (GAA), junctionless (JL), thin-film transistor, ultrathin channel.
Methyglyoxal bis (guanylhydrazone) (MGBG) at 0.5 mM had little effect in vitro on Blastocrithidia culicis, Crithidia oncopelti, and Leishmania spp., but completely inhibited growth of Trypanosoma brucei. Inhibition became irreversible after a 3-h exposure of T. brucei culture procyclics. Treated organisms remained motile, but failed to divide. Polyamines, spermidine, and spermine, did not reverse the anti-trypanosome action of MGBG (preloading of cells or concurrent administration). Two intraperitoneal injections of the drug at a concentration of 50 mg/kg body weight at a 1-day interval greatly reduced the parasitemia of T. brucei and T. congolense in rats. Trypanosome infections, however, relapsed and killed the animals in 6 days after treatment. It was evident from the results of tracer experiments with T brucei that MGBF significantly lowered incorporation of [3H]thymidine by culture pocyclics and of [3H]uridine by bloodstream forms; in both stages [3H]leucine incorporation was only slightly inhibited. It is suggested that MGBG interferes with nucleoside incorporation by Trypanosoma and that its mode of action is different in bloodstream and culture procyclics.
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