We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded Q ≈ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at T = 40 K) lasing was obtained with an incident optical power as low as P th = 10 mW (λp = 808 nm). The laser linewidth was found to be ≈3 GHz at Pp ≈ 5 P th .
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