SnO 2 nanowalls were synthesized on silicon substrate by the thermal chemical vapor transport method at a low temperature of around 650 °C under atmospheric pressure. The microstructure and morphology of the SnO 2 nanowalls were evaluated by using scanning electron microscopies and X-ray diffraction. Room temperature photoluminescence spectra of the nanowalls showed a broad emission band centering at about 530 nm. Field emission measurements demonstrated that the nanowalls possessed good performance with a turn-on field of ~3.5 V/µm and a threshold field of ~6.1 V/µm.
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