Crystalline InMnAs quantum dots with symmetric single spin domain particles have been formed on GaAs substrates using molecular beam epitaxy. The structural and magnetic properties of the quantum dots are characterized by a variety of techniques. Their magnetization curve as a function of temperature indicates that the ferromagnetic transition temperature is as high as 400 K (see Figure).
Abstraci -For a high density recording media, the magnetic switching volume is of great importance when considering media noise and thermal stability. CoSdCr films have been prepad and the influence of the Cr underlayer thickness and of the magnetic layer preparation conditions on the magnetic switching volume have been investigated through magnetic viscosity and remnance curve measurements. The measured switching volumes ranged from 3.0 to 15.2x10-'*cm3, and implications regarding noise and thermal stability are discussed.
Temperature Ferromagnetic Transition. -The title quantum dots are formed on GaAs substrates using molecular beam epitaxy. The samples are characterized by AFM, TEM, and EDX. Their magnetization curve as a function of temperature indicates that the ferromagnetic transition temperature is as high as 400 K. The quantum dots offer opportunities for investigations of fundamental science, and they hold promise for potential applications in next-generation spintronic devices operating at room temperature. -(JEON*, H. C.; JEONG, Y. S.; KANG*, T. W.; KIM, T. W.; CHUNG, K. J.; CHUNG, K.
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