(In1‐xMnx)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Temperature Ferromagnetic Transition.

Jeon, H. C.; Jeong, Y.S.; Kang, Tae Won; Kim, Tae Whan; Chung, Kwang Jo; Jhe, Wonho; Song, Sukhyun

doi:10.1002/chin.200309015

Cited by 3 publications

(5 citation statements)

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“…2c and corresponding inset show the temperature-dependent saturation and remnant moments per Mn ion, respectively. Both of them demonstrate weak temperature dependences and a substantial amount of magnetization moments remains even at 400 K. This phenomenon has also been observed recently in several nanostructure systems (22,28–30). For example, 1% of Mn doping in Ge nanowires produces room temperature ferromagnetism and a weak temperature dependence of the saturation moments (29,30); Cr doped InAs DMS QDs with the Cr/In flux ratio between 0.026 and 0.18 display a Curie temperature beyond 400 K while the remnant moment remains almost the same in the temperature range from 5 K to 300 K (28).…”

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotssupporting

confidence: 74%

“…3b). The appearance of bright-and-dark areas in the MFM image clearly shows the formation of magnetic domains in the Mn 0.05 Ge 0.95 QDs, which is similar to (In, Mn)As DMS QDs (22). Fig.…”

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 78%

“…No evident precipitates and phase separations of Mn 5 Ge 3 and Mn 11 Ge 8 were observed (21). It is noted that Mn doped single-crystalline (In 0.84 Mn 0.16 )As QDs were also found to maintain nearly perfect crystallinity although the Mn doping exceeded the solubility limit in InAs (22,23). …”

Section: Growth and Structural Characterization Of Mn005ge095 Quantmentioning

confidence: 99%

“…For example, 1% of Mn doping in Ge nanowires produces room temperature ferromagnetism and a weak temperature dependence of the saturation moments (29,30); Cr doped InAs DMS QDs with the Cr/In flux ratio between 0.026 and 0.18 display a Curie temperature beyond 400 K while the remnant moment remains almost the same in the temperature range from 5 K to 300 K (28). With a Mn concentration of 16% in InAs QDs, the temperature-dependent magnetization keeps nearly constant until it reaches 400 K (but no electric-field dependence of magnetization was reported) (22). In contrast, the highest Curie temperature for III-V DMS bulk materials achieved so far only has a record of 185 K (31).…”

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 99%

“…In contrast, the highest Curie temperature for III-V DMS bulk materials achieved so far only has a record of 185 K (31). While the discrepancy of Curie temperatures is still under investigation, the enhanced ferromagnetism in these nanostructures may be attributed to quantum confinement effect (22). …”

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 99%

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Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

et al. 2011

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Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K) and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs), materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS) technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs) and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS) capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots) was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

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Section: Magnetic Properties Of the Mn005ge095 Quantum Dotssupporting

confidence: 74%

“…3b). The appearance of bright-and-dark areas in the MFM image clearly shows the formation of magnetic domains in the Mn 0.05 Ge 0.95 QDs, which is similar to (In, Mn)As DMS QDs (22). Fig.…”

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 78%

Section: Growth and Structural Characterization Of Mn005ge095 Quantmentioning

confidence: 99%

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 99%

Section: Magnetic Properties Of the Mn005ge095 Quantum Dotsmentioning

confidence: 99%

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Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

et al. 2011

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Tunable Ferromagnetism above Room-Temperature in Self-Assembled (In,Mn)As Diluted Magnetic Semiconductor Quantum Dots on Be-Doped AlxGa1-XAs Template by Molecular Beam Epitaxy

Guo

Zhao

et al. 2012

AMR

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With the introduction of Be-doped AlxGa1-xAs template, self-assembled In0.79Mn0.21As quantum dots samples were prepared on semi-insulating (001) GaAs substrates by molecular beam epitaxy. High quantum dots density was confirmed by the atomic force microscopy. The ferromagnetism of the samples was revealed by superconducting quantum interference device magnetometer analysis at 10K, and the Curie temperatures ranging from 292 to 314K were able to be regulated by adjusting Al content and Be dopant in Be-doped AlxGa1-xAs templates, implying the feasible application of spintronic devices.

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Raman Scattering and Photoluminescence Studies of Zn1-xMnxO Nanowires via Vapor Phase Growth

Chang

Chen

Yu³

et al. 2005

MSF

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In this paper, we investigated the Raman scattering and photoluminescence of Zn1-xMnxO nanowires synthesized by the vapor phase growth. The changes of E2(High) and A1(LO) phonon frequency in Raman spectra indicate that the tensile stress increases while the free carrier concentration decreases with the increase of manganese. The Raman spectra exited by the different lasers exhibit the quantum confinement effect of Zn1-xMnxO nanowires. The photoluminescence spectra reveal that the near band emission is affected by the content of manganese obviously. The values of IUV/G decrease distinctly with the manganese increase also demonstrate that more stress introduced with the more substitution of Mn for Zn.

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(In_1‐xMn_x)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Temperature Ferromagnetic Transition.

Cited by 3 publications

References 1 publication

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Tunable Ferromagnetism above Room-Temperature in Self-Assembled (<i>In,Mn</i>)As Diluted Magnetic Semiconductor Quantum Dots on Be-Doped Al<sub>x</sub>Ga<sub>1-X</sub>As Template by Molecular Beam Epitaxy

Raman Scattering and Photoluminescence Studies of Zn<sub>1-x</sub>Mn<sub>x</sub>O Nanowires via Vapor Phase Growth

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