Selective growth of GaAs on GaAs-coated Si substrate is performed by liquid phase electroepitaxy (LPEE) in which dc current flows from the substrate to the melt in the conventional liquid-phase epitaxy. The GaAs on Si substrate is prepared by metallorganic chemical vapor deposition. The lateral overgrowth on the mask is obtained in the LPEE. The selective LPEE growth mechanism is discussed. The growing species falling on the mask is pulled into the window region by electromigration resulting in the lateral growth.
Selective lateral growth of GaAs over SiO2-covered GaAs substrate by liquid-phase electroepitaxy (LPEE) is analyzed using a simplified model, and the analysis is compared with the experiment. The aspect ratio defined as the ratio of lateral to vertical growth rate is shown to be greatly enhanced by flowing current during LPE growth, and an aspect ratio of more than 10 is experimentally obtained. The enhanced lateral growth is caused by the increased transport of the growing species by the electric field. The simplified growth model discussed in this paper agrees with the experimental results reasonably well and expresses most of the important features of the LPEE.
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