In this work, we study the impact of channel capping layer on III-V trigate MOSFET. 3D device simulation shows that the 14nm device with In 1-x Ga x As/In 0.53 Ga 0.47 As channel has large driving current owing to small band gap and low alloy scattering at the channel surface. The mole fraction (x) of Ga, varying from 0.27 to 0.42, and the thickness of capping layer In 1-x Ga x As, ranging from 3 to 5 nm, are studied for device DC characteristic. The device with a 4-nm-thick In 0.68 Ga 0.32 As capping layer is promising for advanced device applications.
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