The deuterated tris(hexafluoroacetylacetonato)neodymium(III) complex, Nd(HFA-D) 3 , was obtained by ketoenol tautomerism reaction of Nd(HFA) 3 in methanol-d 4 . The emission of Nd(HFA-D) 3 was observed in the following anhydrous deuterated organic solvents: methanol-d 4 , acetone-d 6 , THF-d 8 , DMF-d 7 , and DMSO-d 6 .The intensity and lifetime of the emission in DMSO-d 6 are much superior to those in other deuterated solvents. The specific interaction of DMSO molecules with Nd(HFA) 3 was confirmed by 13 C NMR and 19 F NMR analysis. The strong coordination ability of DMSO to Nd 3+ ion in Nd(HFA-D) 3 led to the enhanced emission in DMSO owing to the suppression of radiationless transition via vibrational excitation of D 2 O molecules in the vicinity of Nd(HFA-D) 3 .

No abstract

No abstract

No abstract

Defects in the supercritical thickness strained-Si layer grown on a fully relaxed SiGe buffer layer were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM observation of chemically etched surfaces showed that etch pits having a crosshatch pattern due to misfit dislocations decrease and segments and deep valley profiles increase with an increase in the strain energy of the Si. We found that the segment corresponds to an extended dislocation, of which a 30° partial is in the strained-Si layer and a 90° partial is in the SiGe layer, and the deep valley corresponds to a stacking fault found by a high-resolution TEM observation. A model of the generation of the stacking fault related to development of the misfit dislocation is also discussed here.