Recent experimental studies have demonstrated that single molecules or a small number of self-assembled molecules can perform the basic functions of traditional electronic components, such as wires and diodes. In particular, molecular wires inserted into nanopores can be used as active elements for the fabrication of resonant tunneling diodes (RTDs), whose I/V characteristics reveal a Negative Differential Resistance (NDR) behavior (i.e., a negative slope in the I/V curve). Here, quantum-chemical calculations are used to describe on a qualitative basis the mechanism leading to NDR in polyphenylene-based molecular wires incorporating saturated spacers. This description is based on the characterization of the evolution of the wire electronic structure as a function of a static electric field applied along the molecular axis, which simulates the driving voltage between the two electrodes in the RTD devices. We illustrate that the main parameters controlling the NDR behavior can be modulated through molecular engineering of the wires.

The origin of the sharp peak profile (i.e., negative differential resistance, NDR) observed in the I/V curves of three-ring phenylene ethynylene oligomers is a topic of major current interest. Here, quantum-chemical calculations are performed to analyze the evolution of the one-electron structure of an unsubstituted three-ring oligomer under the influence of a static electric field (which models the driving voltage applied in the experiments). The results indicate that the rotation of the central ring of the oligomer induces resonant tunneling processes over a limited voltage range. This can thus be responsible for the NDR signature observed experimentally.

We report excellent correlations between the first negative threshold potentials (V(TH)s) for electric conduction, electrochemical potentials, and computed lowest unoccupied molecular orbital energies in a series of phenylene-ethynylene oligomers bearing a sulfur-based anchoring unit and different electroactive substituents on the central benzene ring. The theoretical and electrochemical results strongly suggest that the peaks observed in the i-V curves have a true molecular origin and are associated with distinct unoccupied molecular levels of the compounds that are strongly localized on the central ring (except for compound I). This localization might account for the existence of a long-lived radical-anion state that permits lateral electron hopping and leads to charge trapping and storage.