A new model of three-electrode surface-discharge AC-PDPs for driving waveform analysis and design was developed. A cell state is represented by a two-dimensional cell voltage vector, which is the sum of a wall voltage vector and an applied voltage vector. These vectors can be expressed on a plane of cell voltages, and the threshold cell voltages at firing are on a close curve on this plane. Using these concepts, wall voltages measurements, cell behavior at ramp setup, and the design of high-speed addressing waveforms are discussed.
We have systematically studied the electrical properties of heavily Si-doped GaAs grown on the (311)A GaAs surfaces by molecular beam epitaxy. It is found that the conduction type drastically changes from p type to n type with decreasing growth temperature at a critical temperature of ∼430 °C for uniform doping and ∼480 °C for the δ-doping case, with the transition temperature width as narrow as ∼50 °C for both cases. The highest hole density obtained for uniformly doped layers was 1.5×1020 cm−3, while for δ-doped layers a sheet hole density as high as 2.6×1013 cm−2 was achieved, which is the highest sheet hole density ever reported for δ-doped p-type GaAs.
We investigated a weak discharge of ramp-wave driving in AC-PDPs. A new interpretation of the wall voltage transfer curve for ramp-wave driving was introduced. Both the sweep-rate of rampwaves and the priming affect wall voltage controllability. These effects can be explained by the turn-on characteristics of the transfer curve.
Abstract—
To improve PDP performance, we developed an AC‐PDP with the Delta Tri‐Color Arrangement (DelTA) cell structure and arc‐shaped electrodes. The experimental panel has a pixel pitch of 1.08 mm and luminous efficacy of 3 lm/W at a luminance of 200 cd/m2 despite its conventional gas mixture of Ne and Xe (4%) and conventional phosphor set. Moreover, its peak luminance can be greater than 1000 cd/m2. The strong dependence of luminous efficacy on the sustain voltage is also discussed in this paper.
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