Self-assembled In1−xMnxAs quantum dots (0.19⩽x⩽0.45) have been grown on GaAs (100) substrates by low-temperature molecular beam epitaxy. The microstructure analysis revealed that the uniformly distributed In1−xMnxAs dots have a zinc blende structure as x⩽0.38. Furthermore, all samples exhibit ferromagnetic state at 5K, and their Curie temperatures range from 260to340K varying with x. These (In, Mn)As quantum dots are promising for room-temperature spintronic devices.
Articles you may be interested inOrigin of ferromagnetism in self-assembled Ga 1 − x Mn x As quantum dots grown on Si Appl. Phys. Lett. 97, 242505 (2010); 10.1063/1.3526378 Room-temperature ferromagnetism in self-assembled (In, Mn)As quantum dots Appl. Phys. Lett. 90, 022505 (2007); 10.1063/1.2430930
Formation and property of InSb self-assembled quantum dots on GaAsSb lattice matched to InPSelf-assembled In 0.79 Mn 0.21 As quantum dots were successfully grown on GaAs ͑001͒ substrates by low-temperature molecular beam epitaxy. Atomic force microscopy and high-resolution transmission electron microscopy confirm the formation of quantum dots. High-resolution lattice image suggests that In 0.79 Mn 0.21 As dots are single phase with zinc-blend structure. The dots exhibit typical ferromagnetic state at 5 K and demonstrate a Curie temperature of ϳ290 K which is much higher than those of ͑In, Mn͒As diluted magnetic semiconductor alloys ever reported. The significant increase in Curie temperature can be attributed to the much higher Mn content in the dots, and the possible enhancement of the hybridization strength between the quantum-confined holes in the dots and the itinerant holes in the semiconductor valence band.
Present study demonstrates the head loss and the flow characteristics as the open microchannel makes turns. The microchannels are of various aspect ratios of depth/width ranging from 0.5 to 2, and makes turns with different angles ranging from 60 to 120 degrees. The investigations are performed both by experiments and numerical simulations based on first principle equations. For the open channel system, the flow is mainly driven by surface tension under same pressure atmosphere. For liquid flow in open microchannel without turn, the liquid front velocity decreases but the interface area of liquid-gas increase as flow moves downstream. For turning flows, liquid front velocity is decreased firstly and then increased sharply at the turning point. Furthermore, the liquid front velocity can be increased for higher aspect ratio of channel height and width, and the effect of aspect ratio is significant up to aspect ratio between 1.0–1.5. Detailed flow characteristics as well as the head loss coefficient due to microchannel turning are discussed.
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