Heterojunction solar cells with Al-alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi2(Al)] on n-Si(100) were investigated. The p-β-FeSi2(Al) was grown by sputter deposition and rapid-thermal annealing. Photocurrent of ∼1.8 mA/cm2 and open-circuit voltage of ∼63 mV were obtained for p-β-FeSi2(Al)/n-Si(100)/Ti/Al control cells with indium-tin-oxide (ITO) top electrode. Open-circuit voltage increased considerably once thin Al layer was deposited before amorphous-FeSi2(Al) deposition. Furthermore, device performances were found to improve significantly (∼5.3 mA/cm2 and ∼450 mV) by introducing germanium-nitride electron-blocking layer between ITO and p-β-FeSi2(Al). The improvement is attributed to the formation of epitaxial Al-containing p+-Si at p-β-FeSi2(Al)/n-Si(100) interface and suppressed back-diffusion of photogenerated electrons into ITO.
The material and optical properties of the GaAs/AlxGa1−xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1−xAs buffer layer with x = 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x = 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x = 0.3 buffer layer. Analysis on change of strain in the AlxGa1−xAs buffer layer suggests that the compressive strain at the AlxGa1−xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1−xAs interface when x ∼ 0.3. AlxGa1−xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface.
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