We investigate micro-roughness of silicon surface in remote radiofrequency (RF) SF 6 plasma, for different etching durations. A linear behavior of etching rate is observed as a function of etching time. PL measurements at different temperatures indicate a visible (green and violet) and ultraviolet (UV) emissions. The evolution of surface roughness of Si substrates can be controlled depending on the etching duration.In response to the increase of the etching duration, the surface undergoes nanoscale roughening, ripple formation, and finally microscale roughening. Atomic force microscopy analysis was carried out to surface morphology.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.