Since the early 1980s, SOI technologies have been developed in China, where SIMOX, BESOI and SIMBOND are three main SOI materials technologies commercialized so far. In order to cut down the production cost, one has been trying to improve SIMOX technology by optimizing dose energy match to obtain high quality low-dose SIMOX wafer. By the end of 2005, BESOI SOI pilot line has been established and a new technology named SIMBOND technology has come to birth. Some innovative structures, like SiGe on insulator (SGOI) material, Strain Silicon on insulator (SSOI), AlN buried layer have also been investigated. Some commercial IC manufacturers start to design and produce SOI-based devices since 2002, when Shanghai Simgui Technology Co.,Ltd., was able to produced 100 mm, 125 mm and 150 mm SIMOX wafers and sold them to the semiconductor industry worldwide. This paper presents an outlook, the recent status and future prospect of SOI technologies in China.

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