The synthesis and solid-state characterization of the resonance-stabilized heterocyclic thia/selenazyl radicals 1a-4a is described. While all the radicals crystallize in undimerized slipped pi-stacked arrays, the four crystal structures do not constitute an isomorphous set; crystals of 1a and 3a belong to the orthorhombic space group P2(1)2(1)2(1), while those of 2a and 4a belong to the monoclinic space group P2(1)/n. The origin of the structural dichotomy can be traced back to the packing of the radicals in the P2(1)/n structure, which maximizes intermolecular Se-Se' contacts. There are marked differences in the transport properties of the two groups. Variable temperature conductivity measurements reveal high, but activated, conductivity for the monoclinic pair (2a/4a), with sigma(298 K) > 10(-3) S cm(-1). The application of physical pressure increases the conductivity of both compounds, with sigma(298 K) at 5 GPa reaching 0.5 S cm(-1) for 2a and 2 S cm(-1) for 4a. Variable-temperature magnetic susceptibility measurements indicate strong antiferromagnetic (AFM) coupling for the monoclinic pair 2a and 4a, the behavior of which has been modeled in terms of a molecular-field modified 1D Heisenberg chain of AFM coupled S = 1/2 centers. Extended Huckel theory band structure calculations and density functional theory first principles methods have been used to develop a qualitative understanding of the conductive and magnetic properties of radicals of the type 1-4 as a function of the degree and direction of slippage of the radical pi-stacks.
A synthetic sequence to salts of N-alkylated pyridine-bridged 1,2,3-thiaselenazolo-1,2,3-thiaselenazolylium cations [2]+ (R1 = Me, Et; R2 = H) is described. The corresponding radicals 2 (R1 = Me, Et; R2 = H) can be generated from the cations by chemical or electrochemical reduction. Crystals of the two radicals are isostructural and consist of interpenetrating pi-stacked arrays of closed-shell Se-Se sigma-bonded dimers [2]2 laced together with numerous short intermolecular Se- - -Se, Se- - -S, and Se- - -N contacts. Variable-temperature magnetic, conductivity, and near-infrared optical measurements indicate that the bulk materials behave as small band gap semiconductors with room-temperature conductivities sigma(RT) near 10(-6) S cm(-1) and thermal activation energies Ea of 0.32 eV (R1 = Me) and 0.36 eV (R1 = Et). LMTO band structure calculations on both compounds are consistent with this interpretation. The application of external pressure leads to dramatic increases in conductivity; at 4 GPa sigma(RT) reaches a value near 10(-1) S cm(-1) for R1 = Me and 10(-2) S/cm for R1 = Et. The conductivity remains activated for both compounds, but for R1 = Me the activation energy Ea is reduced to near 0.03 eV at 5 GPa, suggestive of a weakly metallic state.
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