The [001]-oriented Pr3+ doped Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol–gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant (εr) value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature, 110% higher than that of pure PMN-PT samples. Through 2.5% Pr3+ doping, remanent polarization (Pr) and coercive field (Ec) values increased from 11.5 μC/cm2 and 35 kV/cm to 17.3 μC/cm2 and 63.5 kV/cm, respectively, in PMN-PT thin films. The leakage current densities of pure and 2.5% Pr-PMN-PT thin films were on the order of 1.24 × 10−4 A/cm2 and 5.8 × 10−5 A/cm2, respectively, at 100 kV/cm. A high pyroelectric coefficient (py) with a value of 167 μC/m2K was obtained in 2.5% Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application in infrared detectors.
A micro-pyramid structured thin film with a broad-band infrared antireflection property is designed and fabricated by using the single-point diamond turning (SPDT) technique and combined with nano-imprint lithography (NIL). A structure with dimensions of 10 µm pitch and 5 µm height is transferred from the copper mold to the silicon nitride optical film by using NIL and proportional inductively-coupled plasma (ICP) etching. Reflectance of the micro-optical surface is reduced below 1.0% over the infrared spectral range (800-2500 nm). A finite-difference-time-domain (FDTD) analysis indicates that this micro-structure can localize photons and enhance the absorption inside the micro-pyramid at long wavelengths. As described above, the micro-pyramid array has been integrated in an optical film successfully. Distinguishing from the traditional micro-optical components, considering the effect of refraction and diffraction, it is a valuable and flexible method to take account of the interference effect of optical film.
The surface acoustic wave (SAW) gyroscopic effect in an interdigital transducer (IDT) deposited on a piezoelectric substrate is different from that in the piezoelectric substrate due to a reflection induced by IDT. In this work, an extended coupling-of-mode (COM) model including the gyroscopic effect and the reflection was developed to analyze the SAW gyroscopic effect. First, dispersion characteristics parameters of SAW were fitted according to the data derived using the finite element method (FEM). Then, variations of stop band edge frequency were calculated using the extended COM theory by integrating dispersion characteristics parameters into the COM model. We compared its results with those obtained via FEM analysis to confirm the proposed model’s validity. We found that the variation in stop band edge frequency related to gyroscope effect reached the maximum value with a zero reflectivity value. For split IDT, the sensitivity of gyroscope effect is 0.036 Hz/rad/s with a lower than 1% normalized thickness. Conversely, the value of sensitivity was almost zero for bidirectional IDT and electrode width controlled single-phase unidirectional transducer (EWC/SPUDT).
To obtain a high-performance surface acoustic wave (SAW) gyroscope substrate, the propagation characteristics and gyroscopic effect of Rayleigh waves in a 128°Y–X LiNbO3/SiO2/Si (LNOI) functional substrate were investigated with a three-dimensional finite element method. The influence of LNOI structural parameters on Rayleigh wave characteristics, including the phase velocity (vp), electromechanical coupling coefficient (K2) and temperature coefficient of frequency (TCF), were analyzed. The results demonstrate that the SiO2 layer compensates for the negative TCF of 128°Y–X LiNbO3 and enhances the K2 of the LNOI substrate. The Rayleigh wave velocity change of the LNOI substrate after rotations in different directions was studied. The gyroscope gain factor (η) represents the strength of the gyroscopic effect in the differential traveling wave SAW gyroscope and is defined. The ηy and ηz of the LNOI substrate with different structural parameters were investigated. Finally, an LNOI substrate with an hLN/λ of 0.2 and an hSiO2/λ of 0.05 was obtained by balancing the characteristic parameters, with a K2 of 3.96%, TCF of −18.75 ppm/°C and ηy of 0.26. The LNOI substrate has a better gyroscopic effect and temperature stability than the 128°Y–X LiNbO3 crystal. The LNOI substrate meets device miniaturization and integration needs.
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