In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, pchannel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm 2 /V s, respectively. The inverter exhibited an obvious inverter response for switching between logic '1' and logic '0', and yielded a high gain of 14 at V DD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly ptype), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.
Purpose This paper aims to provide a fabrication and measurement of a highly stretchable pressure sensor with a “V-type” array microelectrode on a grating PDMS substrate. Design/methodology/approach First, the “V-type” array structure on the silicon wafer was fabricated by the MEMS technology, and the fabrication process included ultra-violet lithography and silicon etching. The “V-type” array structure on the master mold was then replicated into polycarbonate, which served as an intermediate, negative mold, using a conventional nanoimprint lithography technique. The negative mold was subsequently used in the PDMS molding process to produce PDMS “V-type” array structures with the same structures as the master mold. An Ag film was coated on the PDMS “V-type” array structure surface by the magnetron sputtering process to obtain PDMS “V-type” array microelectrodes. Finally, a PDMS prepolymer was prepared using a Sylgard184 curing agent with a weight ratio of a 20:1 and applied to the cavity at the middle of the two-layer PDMS “V-type” array microelectrode template to complete hot-press bonding, and a pressure sensor was realized. Findings The experimental results showed that the PDMS “V-type” array microelectrode has high stretchability of 65 per cent, temperature stability of 0.0248, humidity stability of 0.000204, bending stability and cycle stability. Capacitive pressure sensors with a “V-type” array microelectrode exhibit ideal initial capacitance (111.45 pF), good pressure sensitivity of 0.1143 MPa-1 (0-0.35 Mpa), fast response and relaxation times (<200 ms), high bending stability, high temperature/humidity stability and high cycle stability. Originality/value The PDMS “V-type” array structure microelectrode can be used to fabricate pressure sensors and is highly flexible, crack-free and durable.
Radio-frequency (RF) attenuators show unique advantages and a great development potential in phased array radars. A kind of programmable step attenuators with high precision based on contact-type microelectromechanical system series switches is proposed herein. This work paid attention to the design and fabrication of switchesthe key components of attenuators. By setting up vent holes on the pull-down plates of switches, the mass of plates was reduced, together with the decreased influence of air damping. Meanwhile, switches were manufactured and packaged through ultraviolet lithography (UV-LIGA) technology with the S parameter test being performed. Results showed that the insertion loss in a range of 0.3 and 1.8 dB under the condition that attenuation modules are short-circuited at the same time, which is basically the same with the simulation results of 0.1-1.3 dB. While all the return losses S11 were <15 dB expect from that at 10 dB. In addition, the designed attenuator showed gentle attenuation in a range of DC ∼20 GHz. However, on the whole, the deviation is controlled within 2 dB, which is basically consistent with the design results of 1 dB. It can be found from the obtained results that all indices of the attenuator satisfied the design requirements.
To solve the difficult problem for the removal of large size sacrificial layers when preparing a terahertz coupler, a new approach is proposed using poly two methyl silicone as a sacrificial layer. Due to its hydrophobicity and high elasticity, cross-linked polydimethylsiloxane (PDMS) can be gently withdrawn from the cavity just after the upper suspension structure is completed. To achieve a robust super structure, we spirt silicon dioxide on the surface of the PDMS to increase its hydrophilicity resulting in large scale preparation of the sacrificial layer. This process greatly reduces the steps and equipments needed for traditional processing technologies. To obtain a good suspended structure, we sputtered silica on its surface to increase the hydrophilicity of PDMS. Experiments show that PDMS may fill the entire cavity, and that the surface has a certain adhesion after treatment, satisfying the preparation requirements of the upper structure. This approach solves the problems involving the fabrication process such as difficulty in removing the large-scale sacrificial layer, reducing the number of complex microfabrication steps and the equipment required resulting in a more cost and time-effective solution. The duration for removal of PDMS from SU-8 structures is also much lower (saving approximately 95% of time) compared to conventional photoresistance technology.
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